High-Density Metal Oxide Semiconductor
- High-Density Metal Oxide Semiconductor
-
HMOS bezeichnet eine Halbleitertechnik-Generation und ist ein Akronym für das englische high-performance MOS (engl. für Metall-Oxid-Halbleiter). HMOS findet in integrierte Schaltkreise hoher Packungsdichte mit NMOS-Technik Anwendung.
HMOS-Generationen (Quelle: [1])
| Generation |
Einführung |
Kanallänge |
Gatterverzögerung |
| HMOS I |
1976 |
≈ 3 µm |
100 ns |
| HMOS II |
1979 |
≈ 2 µm |
30 ns |
| HMOS III |
1982 |
≈ 1,5 µm |
10 ns |
Zuvor waren Strukturgrößen von 6 µm bis 10 µm etabliert.
Andere Halbleitertechnologien sind unter den Bezeichnungen HCMOS, PMOS und den heute überwiegend eingesetzten CMOS bekannt.
Literatur
- K. Yu, R.J.C. Chwang, M.T. Bohr, P.A. Warkentin, S. Stern, C.N. Berglund: HMOS-CMOS-a low-power high-performance technology. In: Solid-State Circuits, IEEE Journal of. 16, Nr. 5, 1981, S. 454–459 (Abstract).
Einzelnachweise
- ↑ Dieter Sautter, Hans Weinerth: Lexikon Elektrotechnik und Mikroelektronik. 2. Auflage. Springer, Berlin 1993, ISBN 978-3540621317.
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