Velocity saturation — In semiconductors, when a strong enough electric field is applied, the carrier velocity in the semiconductor reaches a maximum value.cite web url = http://everything2.com/index.pl?node id=1321513 title = Velocity Saturation accessdate = 2006 10… … Wikipedia
drift velocity saturation — dreifo greičio sotis statusas T sritis radioelektronika atitikmenys: angl. drift velocity saturation vok. Driftgeschwindigkeitssättigung, f rus. насыщение дрейфовой скорости, n pranc. saturation de la vitesse de dérive, f … Radioelektronikos terminų žodynas
Saturation current — is a term used to describe a limit to the amount of current that can flow in an electronic circuit or device. As the voltage applied to a circuit is increased, the current flow will increase proportionately until the saturation current is… … Wikipedia
saturation de la vitesse de dérive — dreifo greičio sotis statusas T sritis radioelektronika atitikmenys: angl. drift velocity saturation vok. Driftgeschwindigkeitssättigung, f rus. насыщение дрейфовой скорости, n pranc. saturation de la vitesse de dérive, f … Radioelektronikos terminų žodynas
Velocity overshoot — is a result of transit times of a charge going from source to drain being smaller than the time required to emit an optical phonon. The velocity therefore exceeds the saturation velocity, which leads to faster Field Effect Transistor switching.… … Wikipedia
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… … Wikipedia
Wide bandgap semiconductors — are semiconductor materials with electronic band gaps larger than one or two electronvolts (eV). The exact threshold of wideness often depends on the application, such as optoelectronic and power devices. Wide bandgap materials are often utilized … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Channel length modulation — Cross section of a MOSFET operating in the saturation region One of several short channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for… … Wikipedia
) wird das longitudinale elektrische Feld E im Kanal sehr groß. Nach 
müsste die Driftgeschwindigkeit v der Ladungsträger stetig zunehmen. Oberhalb einer kritischen Feldstärke sättigt die Geschwindigkeit jedoch (velocity saturation). Diese Sättigung wird durch die erhöhte Streurate hochenergetischer Elektronen, hauptsächlich infolge optischer Phononenemission, verursacht.
auch von einer Abnahme der Ladungsträgerbeweglichkeit μ (mobility degradation).